发明名称 |
Non-Volatile Memory Devices |
摘要 |
Non-volatile memory devices include a tunnel insulating layer on a channel region of a substrate, a charge-trapping layer pattern on the tunnel insulating layer and a first blocking layer pattern on the charge-trapping layer pattern. Second blocking layer patterns are on the tunnel insulating layer proximate sidewalls of the charge-trapping layer pattern. The second blocking layer patterns are configured to limit lateral diffusion of electrons trapped in the charge-trapping layer pattern. A gate electrode is on the first blocking layer pattern. The second blocking layer patterns may prevent lateral diffusion of the electrons trapped in the charge-trapping layer pattern.
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申请公布号 |
US2009261405(A1) |
申请公布日期 |
2009.10.22 |
申请号 |
US20090491529 |
申请日期 |
2009.06.25 |
申请人 |
KIM DONG HYUN;KANG CHANG-JIN |
发明人 |
KIM DONG HYUN;KANG CHANG-JIN |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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