发明名称 |
FLASH MEMORY DEVICE ADAPTED TO PREVENT READ FAILURES DUE TO DUMMY STRINGS |
摘要 |
In a NAND flash memory device, a dummy NAND string is arranged between a plurality of normal NAND strings. A dummy bit line connected to the dummy NAND string is formed and/or controlled such that when program voltages are applied to the normal NAND strings, memory cells within the dummy NAND string are not programmed.
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申请公布号 |
US2009262580(A1) |
申请公布日期 |
2009.10.22 |
申请号 |
US20090495971 |
申请日期 |
2009.07.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWAK PAN-SUK;KIM HONG-SOO |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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