发明名称 |
ISOLATED TRANSISTORS AND DIODES AND ISOLATION AND TERMINATION STRUCTURES FOR SEMICONDUCTOR DIE |
摘要 |
Various integrated circuit devices, in particular a transistor, are formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface of the substrate to the floor isolation region. The trench may be filled with a dielectric material or may have a conductive material in a central portion with a dielectric layer lining the walls of the trench. Various techniques for terminating the isolation structure by extending the floor isolation region beyond the trench, using a guard ring, and a forming a drift region are described. |
申请公布号 |
WO2009108311(A3) |
申请公布日期 |
2009.10.22 |
申请号 |
WO2009US01187 |
申请日期 |
2009.02.25 |
申请人 |
ADVANCED ANALOGIC TECHNOLOGIES, INC.;DISNEY, DONALD, R.;WILLIAMS, RICHARD, K. |
发明人 |
DISNEY, DONALD, R.;WILLIAMS, RICHARD, K. |
分类号 |
H01L21/336;H01L21/76;H01L21/762 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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