| 摘要 |
PURPOSE: A method for forming a contact hole of a semiconductor device is provided to improve an electrical property of a contact resistor by suppressing difference of a substrate loss in forming bit line contact holes of difference size at the same time. CONSTITUTION: A first interlayer insulation film(35A), an etching stop film(36), and a second interlayer insulation film(37) are laminated on a top part of a substrate(31). A contact mask(38) in which a hole type contact hole(39,40) and a slit type contact hole(41) are defined is formed. The second interlayer insulation film is etched in order to stop the etching in the etching stop film. The etching stop film and the first interlayer insulation film are etched in order to expose the substrate.
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