| 摘要 |
PROBLEM TO BE SOLVED: To increase the joint strength of a multilayer-chip-type high-frequency semiconductor device, to stabilize characteristics of the semiconductor device, and to enhance the performance of the semiconductor device. SOLUTION: A chip 10a is placed above a chip 20a, and bumps 31a to 31d are interposed between the two chips 10a and 20a. The chip 10a comprises high-frequency circuit terminals 12a and 12b, and a low-frequency circuit terminal 13; and the chip 20a comprises high-frequency circuit terminals 22a and 22b, and a low-frequency circuit terminal 23. The high-frequency circuit terminals 12a and 12b are connected to the high-frequency circuit terminals 22a and 22b, respectively, through one bump (31a, 31b). Meanwhile, the low-frequency circuit terminal 13 is connected to the low-frequency circuit terminal 23 through two bumps 31c and 31d. COPYRIGHT: (C)2010,JPO&INPIT |
