| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming fine patterning of a semiconductor device in which patterns differing in pattern density or pattern width and having various sizes and various pitches are formed on one substrate at the same time. SOLUTION: The method of forming fine patterning of the semiconductor device includes the steps of: forming a plurality of mold patterns 140a, disposed repeatedly at a first pitch only in a first region, on a substrate having the first region and a second region; forming a fine mask layer 150 in the first region and the second region on the substrate at the same time; forming an upper hard mask pattern 160a covering a portion of an upper surface of the fine mask layer 150 only in the second region; and etching the fine mask layer 150 in the first region and the second region using the upper hard mask pattern 160a as an etching mask to form a plurality of fine spacers 150a in the first region on both sidewalls of the plurality of mold patterns 140a, and also forming a low-density mask pattern in the second region at the same time. COPYRIGHT: (C)2010,JPO&INPIT |
