发明名称 |
THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
Disclosed is a thin film transistor which includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which functions as a channel formation region; and a semiconductor layer including an impurity element imparting one conductivity type. The semiconductor layer exists in a state that a plurality of crystalline particles is dispersed in an amorphous silicon and that the crystalline particles have an inverted conical or inverted pyramidal shape. The crystalline particles grow approximately radially in a direction in which the semiconductor layer is deposited. Vertexes of the inverted conical or inverted pyramidal crystal particles are located apart from an interface between the gate insulating layer and the semiconductor layer. |
申请公布号 |
US2009261328(A1) |
申请公布日期 |
2009.10.22 |
申请号 |
US20090423123 |
申请日期 |
2009.04.14 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MIYAIRI HIDEKAZU;DAIRIKI KOJI;EGI YUJI;JINBO YASUHIRO;ISA TOSHIYUKI |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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