发明名称 APPARATUS FOR CHEMICAL VAPOR DEPOSITION
摘要 PURPOSE: An apparatus for chemical vapor deposition is provided to increase reliability of the evaporation by supplying huge amount of gas at once and mixing gas rapidly inside a camber. CONSTITUTION: An apparatus for chemical vapor deposition comprises a chamber(10), a first feed member(31), a second feed member(32) and a supply flow channel. The chamber has a furnace in which the evaporation on an object is made. The first feed member includes a plurality of gas pipe to emit a first gas to the furnace horizontally. The second feed member includes a hole of the fixed level in which the gas pipe passes through. A second gas is materially supplied to the horizontal direction to the furnace. The supply flow channel is located between gas pipe and hole.
申请公布号 KR20090110537(A) 申请公布日期 2009.10.22
申请号 KR20080036095 申请日期 2008.04.18
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 KIM, CHANGSUNG SEAN;YOO, SANG DUK;HONG, JONG PA;LEE WON SHIN
分类号 C23C16/455;C23C16/00 主分类号 C23C16/455
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