发明名称 |
APPARATUS FOR CHEMICAL VAPOR DEPOSITION |
摘要 |
PURPOSE: An apparatus for chemical vapor deposition is provided to increase reliability of the evaporation by supplying huge amount of gas at once and mixing gas rapidly inside a camber. CONSTITUTION: An apparatus for chemical vapor deposition comprises a chamber(10), a first feed member(31), a second feed member(32) and a supply flow channel. The chamber has a furnace in which the evaporation on an object is made. The first feed member includes a plurality of gas pipe to emit a first gas to the furnace horizontally. The second feed member includes a hole of the fixed level in which the gas pipe passes through. A second gas is materially supplied to the horizontal direction to the furnace. The supply flow channel is located between gas pipe and hole.
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申请公布号 |
KR20090110537(A) |
申请公布日期 |
2009.10.22 |
申请号 |
KR20080036095 |
申请日期 |
2008.04.18 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KIM, CHANGSUNG SEAN;YOO, SANG DUK;HONG, JONG PA;LEE WON SHIN |
分类号 |
C23C16/455;C23C16/00 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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