| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting thyristor that emits light of about 680 to 770 nm in wavelength and is improved in controllability of light emission, to provide a light emitting element array having the light emitting thyristor, and to provide an image forming apparatus. <P>SOLUTION: A third semiconductor layer 5 of the light emitting thyristor 1 having first to fourth semiconductor layers 3 to 6 having an NPNP structure is not formed of only AlGaAs of one conductivity type, but has a third region 17 formed of InGaP of the one conductivity type between first and second regions 15 and 16 formed of AlGaAs of the one conductivity type and also has a gate electrode 11 connected to the third region 17, so InGaP which hardly oxidizes and the gate electrode 11 are brought into stable ohmic contact with each other. Therefore, voltage-current characteristics of a connection part between the gate electrode 11 and third semiconductor layer 5 have linearity and the controllability of light emission is improved. <P>COPYRIGHT: (C)2010,JPO&INPIT |
