发明名称 |
HALBLEITERVORRICHTUNG UND VERFAHREN ZU IHRER HERSTELLUNG |
摘要 |
An insulating layer (3) is formed on a Si wafer (1). An opening portion is made in this insulating layer (3), and subsequently a rerouting layer (2) is formed. Next, a resin layer (4) is formed on the rerouting layer (2). The resin layer (4) is then cured so that the rerouting layer (2) and a Cu foil (5) are bonded to each other through the resin layer (4). Thereafter, a ring-like opening portion (4a) is made in the resin layer (4), and a Cu plating layer (8) is formed inside this opening portion (4a). <IMAGE> |
申请公布号 |
DE60042914(D1) |
申请公布日期 |
2009.10.22 |
申请号 |
DE2000642914 |
申请日期 |
2000.06.12 |
申请人 |
FUJIKURA LTD. |
发明人 |
INABA, MASATOSHI;SUZUKI, TAKANAO;OMINATO, TADANORI;KAIZU, MASAHIRO;KUROSAKA, AKIHITO |
分类号 |
H01L21/60;H01L23/31;H01L23/485 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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