发明名称 SPUTTERING TARGET
摘要 <p>Disclosed is a sputtering target having a flat and smooth surface having a uniform composition, which is obtained by using, as a raw material, a conductive inorganic oxide powder having finer particle size and better powder resistance than conventional conductive inorganic oxide powders. The sputtering target is obtained by molding and sintering a conductive inorganic oxide powder having an average primary particle diameter of 3-40 nm, which is provided with conductivity by being doped with one or more components selected from aluminum, gallium and indium in an amount of 0.1-20.0 wt% in terms of oxides. The conductive inorganic oxide powder is obtained by electrolytic doping wherein a slurry containing an inorganic oxide powder having an average primary particle diameter of 1-30 nm, which is blended with one or more components selected from aluminum, gallium and indium, is subjected to electrolysis.</p>
申请公布号 WO2009128495(A1) 申请公布日期 2009.10.22
申请号 WO2009JP57642 申请日期 2009.04.16
申请人 HIRAAKI CO., LTD.;TAKAKI, TAKESHI;HIRAAKI, TAISEI;NAKASHIMA, KUNIHIKO 发明人 TAKAKI, TAKESHI;HIRAAKI, TAISEI;NAKASHIMA, KUNIHIKO
分类号 C23C14/34;C04B35/453;C04B35/628 主分类号 C23C14/34
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