| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which has high light extraction efficiency and also has a wide light distribution, and to provide a method of manufacturing the same. <P>SOLUTION: In the semiconductor light emitting device having a metal layer, a first cladding layer, a light emitting layer, a second cladding layer and a first electrode layer on the side of the upper surface of a support substrate and having a second electrode layer on the side of the lower surface of the support substrate, the first surface facing the light emitting layer of the metal layer presents a rugged shape. <P>COPYRIGHT: (C)2010,JPO&INPIT |
