发明名称 SPUTTERING METHOD AND SPUTTERING APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a sputtering method and a sputtering apparatus for achieving the high quality of a film by preventing any reverse sputter by simple constitution and simple control, controlling the deviation of the composition, enhancing reproducibility of the film deposition, and depositing a piezoelectric film of high quality having no change in the film quality, and a thin film such as an insulating film and a conductive film. <P>SOLUTION: The sputtering apparatus has a sputtering electrode for holding a target and a substrate holder which is arranged opposite to the sputtering electrode to hold a substrate in a vacuum vessel, and has an impedance adjusting circuit having an impedance circuit capable of adjusting impedance of the substrate holder. By adjusting the impedance of the impedance circuit, the impedance of the substrate holder is adjusted, and the electric potential of the substrate is adjusted thereby. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2009242927(A) 申请公布日期 2009.10.22
申请号 JP20080094002 申请日期 2008.03.31
申请人 FUJIFILM CORP 发明人 SHINKAWA TAKAMI;NAONO TAKAYUKI;FUJII TAKAMITSU
分类号 C23C14/34;H01L21/316;H01L21/8246;H01L27/105;H01L41/09;H01L41/18;H01L41/316;H01L41/39 主分类号 C23C14/34
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