| 摘要 |
PROBLEM TO BE SOLVED: To provide a production process of a transparent insulating substrate, having a silicon thin film formed on one major surface, i.e. an SOI substrate, having a roughened major surface on the reverse side of a surface where the silicon thin film is formed, while preventing generation of metal impurities or particles, using a simple method. SOLUTION: A production process of an SOI substrate, having a silicon thin film formed on one major surface of a transparent insulating substrate and a roughened second major surface, i.e. a major surface on the reverse side of the first major surface, comprises a step of preparing a transparent insulating substrate, and a step of forming a silicon thin film on the first major surface, i.e. one major surface, of the transparent insulating substrate. The production process of an SOI substrate further comprises a one-side roughening step of processing the transparent insulating substrate so that the first major surface of the transparent insulating substrate has a surface roughness which is larger than that of the second major surface, when it is compared using the RMS value after the step of preparing a transparent insulating substrate, and a step of etching only the roughened second major surface, after the one-side roughening step. COPYRIGHT: (C)2010,JPO&INPIT |
