SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which enhances forward surge breakdown strength while maintaining a high reverse breakdown voltage. SOLUTION: A semiconductor device 1 includes an n+-type silicon carbide single crystal substrate 102, an n--type silicon carbide epitaxial layer 104, a polysilicon layer 106, and a back electrode 110, wherein a p-type impurity region 108 is formed on the surface of the n--type silicon carbide epitaxial layer 104 to include the end of the polysilicon layer 106 on the plan view, and an n---type impurity region 112 containing n-type impurities at a lower concentration than that of the n--type silicon carbide epitaxial layer 104 is formed at least in a region on the surface of the n--type silicon carbide epitaxial layer 104 surrounded by the p-type impurity region 108. COPYRIGHT: (C)2010,JPO&INPIT