METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of preventing the characteristic of a bipolar transistor from degrading. Ž<P>SOLUTION: This manufacturing method of a semiconductor device 100 includes processes of: forming a planar bipolar transistor 1 on a region A of a silicon substrate 11; forming a cover film 32a formed of a silicon nitride film to cover the region on which the planar bipolar transistor 1 is formed; and thereafter implanting ions into the region on which the bipolar transistor 1 is formed in a state where the region A on which the planar bipolar transistor 1 is formed is covered with the cover film 32a. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž