| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dynamic random access memory which operates at a high speed by reducing the capacity of a bit line. Ž<P>SOLUTION: On a first conductive layer 6 which serves as one of source and drain regions, a first semiconductor layer 11, a channel semiconductor layer 12, and a second conductive layer 13 which serves as the other of the source and drain regions and also as a storage node 26 are provided. On the second conductive layer 13, a capacitor insulating film 21 is provided. A cell plate 22 is provided on the storage node 26 with the capacitor insulating film 21 interposed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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