| 摘要 |
A semiconductor device includes a memory cell transistor including a first lower insulating film provided on a semiconductor substrate, a first intermediate insulating film provided on the first lower insulating film, a first upper insulating film provided on the first intermediate insulating film, and a first gate electrode provided on the first upper insulating film, and a select transistor including a second lower insulating film provided on the semiconductor substrate, a second intermediate insulating film provided on the second lower insulating film, a second upper insulating film provided on the second intermediate insulating film, and a second gate electrode provided on the second upper insulating film, wherein trap density of the second intermediate insulating film is lower than that of the first intermediate insulating film.
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