| 摘要 |
<p>PURPOSE: A CMOS transistor using Ge condensation and a manufacturing method thereof are provided to easily manufacture a CMOS transistor by dividing a p-channel and an n-channel on a silicon wafer through Ge condensation. CONSTITUTION: A CMOS transistor(100) using Ge condensation includes an insulation layer(112), a silicon layer, a first gate insulation layer(124), a first gate(125), a second gate insulation layer(144), and a second gate(145). The silicon layer is formed on the insulation layer, and is divided into a p-MOS transistor region and an n-MOS transistor region. The first gate insulation layer and the first gate are formed on a channel region of the p-MOS transistor region. The second gate insulation layer and the second gate are formed on a channel region of the n-MOS transistor region.</p> |
