发明名称 METHOD OF GROWING ALN CRYSTALS, AND ALN LAMINATE
摘要 <p>Provided are a method of growing AlN crystals in which AlN of good crystallinity is grown, and AlN laminates. The method of growing AlN crystals includes the following processes. Firstly a raw material (17) including AlN is prepared. A substrate (11) of a different type having a main surface (11a) is prepared. A first layer (12) having a flat surface (12a) is formed by subliming the raw material (17) and growing an AlN crystal covering the main surface (11a) of the substrate (11) of a different type. The raw material (17) is sublimed and a second layer (13) comprising AlN is formed on the surface (12a) of the first layer (12). The second layer (13) is formed at a higher temperature than the first layer (12).</p>
申请公布号 WO2009128434(A1) 申请公布日期 2009.10.22
申请号 WO2009JP57472 申请日期 2009.04.14
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD.;TANIZAKI, KEISUKE;MIZUHARA, NAHO;MIYANAGA, MICHIMASA;SATOH, ISSEI;NAKAHATA, HIDEAKI;YAMAMOTO, YOSHIYUKI 发明人 TANIZAKI, KEISUKE;MIZUHARA, NAHO;MIYANAGA, MICHIMASA;SATOH, ISSEI;NAKAHATA, HIDEAKI;YAMAMOTO, YOSHIYUKI
分类号 C30B29/38 主分类号 C30B29/38
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