| 摘要 |
PROBLEM TO BE SOLVED: To provide a high withstanding voltage transistor wherein the current caused by impact ion is reduced by suppressing generation of hot carrier, punch through is also reduced, and a stable threshold value is provided, resulting in providing a sufficient breakdown voltage with low on-resistance. SOLUTION: In the high withstanding voltage transistor, a channel region 14 consists of: a high concentration region 14a including p-type impurity at high concentration; and a low concentration region 14b which is the region between an end part of an n-type impurity region 13a (offset impurity region 19) and the end part of the high concentration region 14a, and has the p-type impurity lower in concentration than the high concentration region 14a. COPYRIGHT: (C)2010,JPO&INPIT |
