| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting device that improves the efficiency of extracting luminescence light, and to provide a method of manufacturing the device. <P>SOLUTION: The light emitting device includes a light-emitting structure in which a one conducting-type semiconductor layer and a reverse conducting type semiconductor layer are laminated and which has a light emitting part comprising a boundary of the one-conducting type semiconductor layer and the reverse conducting type semiconductor layer, a current diffusion layer bonded to an upper surface of the light emitting structure and an electrode layer bonded to an upper side of the current diffusion layer. The electrode layer is arranged in an outer region compared to a peripheral edge line of the boundary. <P>COPYRIGHT: (C)2010,JPO&INPIT |
