| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can relax the switching speed and will not induce malfunctions of external device. <P>SOLUTION: The semiconductor device 1 includes: a transistor (3) which is provided with a pair of a first semiconductor region (202) and a second semiconductor region 207M of the transistor 3, having a first conductive type; a third semiconductor region 204M, having a second conductive type, a gate insulation film 205M and a gate electrode 206M; and a capacitor 4, which is provided with a first electrode 203C electrically connected to the second semiconductor region 207M in the transistor 3, a second electrode 206C electrically connected to the gate electrode 206M, and a dielectric 205C placed between a first electrode 203C and the second electrode 206C. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
