| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with a cell transistor reduced in off-leak current and having favorable data writing characteristics, and to provide a method of manufacturing the same. Ž<P>SOLUTION: The semiconductor device includes a semiconductor substrate 11, a first gate electrode 13 formed on a main surface of the semiconductor substrate 11 via a first gate insulating film 12, a second gate electrode 17 formed on the first gate electrode 13 via a second gate insulating film 16 and having a shape distorted toward a source region, a silicide film 18 formed on the second gate electrode 17 such that its source-region-side part is thickened toward the second gate electrode 17 to be thicker than its drain-source-side part, the first gate electrode 13, the second gate electrode 17, an oxide film 21 formed on a sidewall of the silicide film 18, a source impurity diffusion layer 19 offset from the first gate electrode 13, and a drain impurity diffusion layer 20 overlapping the first gate electrode 13. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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