摘要 |
A method and apparatus for forming a thin film transistor is provided. A gate dielectric layer is formed, which may be a bilayer, the first layer deposited at a low rate and the second deposited at a high rate. In some embodiments, the first dielectric layer is a silicon rich silicon nitride layer. An active layer is formed, which may also be a bilayer, the first active layer deposited at a low rate and the second at a high rate. The thin film transistors described herein have superior mobility and stability under stress. |
申请人 |
APPLIED MATERIALS, INC.;YANG, YA-TANG;PARK, BEOM SOO;WON, TAE KYUNG;CHOI, SOO YOUNG;WHITE, JOHN, M. |
发明人 |
YANG, YA-TANG;PARK, BEOM SOO;WON, TAE KYUNG;CHOI, SOO YOUNG;WHITE, JOHN, M. |