发明名称 METHOD FOR INSPECTING PLASMA PROCESSING DEVICE, INSPECTION DEVICE, PLASMA PROCESSING DEVICE, METHOD FOR CLEANING PLASMA PROCESSING DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for inspecting a plasma processing device, an inspection device, the plasma processing device, a method for cleaning the plasma processing device, and a method for manufacturing the semiconductor device, in which the condition of a metal attachment inside a transport pipe is sensed. <P>SOLUTION: The inspection method of the plasma processing device includes: a plasma generating chamber which includes a discharge tube and a microwave introduction means and generates plasma by making a microwave act on a gas introduced in the discharge tube; a plasma treatment chamber which accommodates a processed material and can maintain atmosphere which is decompressed less than atmospheric pressure; and a transport pipe which connects the plasma generating chamber and the plasma treatment chamber. The inspection gas is introduced in the discharge tube, and the microwave is introduced in the discharge tube. The plasma of the inspection gas is generated thereby. The light intensity in the plasma treatment chamber is measured. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009246088(A) 申请公布日期 2009.10.22
申请号 JP20080089821 申请日期 2008.03.31
申请人 SHIBAURA MECHATRONICS CORP 发明人 MUTO MAKOTO
分类号 H01L21/3065;H01L21/304;H01L21/31;H05H1/00;H05H1/46 主分类号 H01L21/3065
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