| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a diode where the polarity of a frame board becomes inverse and radiation performance is not prevented. <P>SOLUTION: The diode has an anode lead 114 connected to the anode electrode of a diode chip and a cathode lead 124 connected to the cathode electrode of a diode chip where a pn junction diode chip 106 is placed on the surface of the conductive frame board 131 and the bottom surface of the frame board is exposed. In the diode chip 106, the surface of a P-type semiconductor 111 which is planar and has the anode electrode formed on a bottom surface is joined to the bottom surface of an N-type semiconductor 121 which is planar and has the cathode electrode formed on a surface, a glass passivation layer is formed on the side of the N-type semiconductor, and the anode electrode of the diode chip abuts on a surface 132 of the frame board 131. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
