| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device outputting word line voltage through an external pin, and to provide a voltage measurement method thereof. <P>SOLUTION: The semiconductor memory device includes a selection signal generation circuit 220, a word line voltage generation circuit 240, and a switch circuit 260. The selection signal generation circuit activates one of selection signals corresponding to each of word line in accordance with an external command signal indicating a test operation mode and an external selection code signal for specifying word line voltage used for the memory device, during the test operation mode for discriminating whether the word line voltage is a desired level or not. The word line voltage generation circuit generates word line voltage corresponding to the activated selection signal among the word line voltage, the switch circuit transfers word line voltage output from the word line voltage generation circuit to a pad connected to the external pin in accordance with the external command signal. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
