Complementary Metal Oxide Semiconductor Integrated Circuit Using Raised Source Drain and Replacement Metal Gate

摘要

A complementary metal oxide semiconductor integrated circuit may be formed with a PMOS device formed using a replacement metal gate and a raised source drain. The raised source drain may be formed of epitaxially deposited silicon germanium material that is doped p-type. The replacement metal gate process results in a metal gate electrode and may involve the removal of a nitride etch stop layer.