摘要 |
<p>A method for alleviating burn-in effect and enabling performing a start-up process in respect of a device comprising a plurality of challengeable memory elements, wherein the memory elements are able to, upon start-up, generate a response pattern of start- up values useful for identification as the response pattern depends on physical characteristics of the memory elements, the method comprising the step of, after start-up of the memory elements, writing a data pattern to the memory elements which is inverse to a response pattern that was previously read from the same memory elements. Thus, degradation of the PMOS transistors due to NBTI can be alleviated.</p> |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;NXP B.V.;TUYLS, PIM, T.;SCHRIJEN, GEERT, J.;KRUSEMAN, ABRAHAM, C. |
发明人 |
TUYLS, PIM, T.;SCHRIJEN, GEERT, J.;KRUSEMAN, ABRAHAM, C. |