| 摘要 |
PURPOSE: A manufacturing method of a semiconductor device is provided to easily etch a bottom part of a pin pattern by performing an etching process of an insulation film for device isolation for forming a pin pattern after performing an ion injection process on the insulation film. CONSTITUTION: A trench(T) for device isolation is formed on a semiconductor substrate(100). An insulation film(108) for a first device isolation is filled inside the trench in order to have a first depth. An ion injection process is performed on the insulation film for the first device isolation. An insulation film for a second device isolation is formed on the insulation film for the first device isolation in order to fill the trench. A pin pattern is formed by removing the insulation film for the device isolation in order to have a second depth in the insulation film for the first device isolation.
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