METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to realize a transistor in which a single channel effect is improved in a peripheral circuit area without influencing a contact forming process of a cell area. CONSTITUTION: A method for fabricating a semiconductor device comprises the following steps. A gate(25) is formed on a substrate(21). The first gate spacer(26) is formed in both sides of the gate. Protruded source and drain areas(27A) are formed on a substrate exposed to both side walls of the first gate spacer. The second gate spacer is formed on the exposed side wall of the first gate spacer. Impurity is doped in the protruded source and drain areas.