| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing solution for a metal used for chemical mechanical polishing, which has a high polishing speed, improves flatness and hardly form a groove between wiring and an insulating layer. <P>SOLUTION: The polishing solution for the metal is used for chemical mechanical polishing in a semiconductor device manufacturing process, and contains a compound indicated by general formula (1), an oxidant, a complex ring compound, and organic acid. The general formula (1): A-Ph(COOH)<SB>2</SB>, wherein Ph indicates a phenyl ring group, and A indicates 1 to 4 substituents having an alkyl group of a carbon number≥3, which are the substituents on a phenyl ring. When the number of A is 1 to 3, another monovalent substituent can be contained further on the phenyl ring. In the formula, two COOH groups are in metal or ortho position relationship with each other on the phenyl ring. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
