发明名称 Voltage Protection Circuit for Thin Oxide Transistors, and Memory Device and Processor-Based System Using Same
摘要 Devices, reference voltage generators, systems and methods are disclosed, including an embodiment of a voltage regulator output transistor using a thin gate insulator to provide a low output impedance despite having a semiconductor channel width that is relatively small. The output transistor is protected from damage by a clamping circuit provided to limit the gate-to-source voltage of the transistor such that damage to the output transistor should be reduced or prevented. One such clamping circuit includes a clamp transistor that receives a reference voltage at its gate. The magnitude of the reference voltage limits to voltage to which the gate of the transistor can be driven. A voltage reference circuit provides the reference voltage so that it compensates for process and temperature variations of the output transistor.
申请公布号 US2009261800(A1) 申请公布日期 2009.10.22
申请号 US20070885824 申请日期 2007.08.10
申请人 MICRON TECHNOLOGY ,INC. 发明人 PAN DONG
分类号 G05F3/08 主分类号 G05F3/08
代理机构 代理人
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