METHOD FOR MANUFACTURING COMPLIANT SUBSTRATE, COMPLIANT SUBSTRATE MANUFACTURED THEREBY, GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR DEVICE HAVING THE COMPLIANT SUBSTRATE AND MANUFACTURING METHOD THEREOF

摘要

A compliant substrate having a reduced stress, a method for manufacturing the same having a reduced manufacturing time, a gallium nitride based compound semiconductor device including the compliant substrate and a method for manufacturing the same are disclosed. The compliant substrate is manufactured by heating a substrate and a group III metal including at least one of an aluminum, a gallium and an indium, and a chloride based compound generated by introducing a HCl gas to the melted group III metal reacts with a NH3 gas to form a nitride based thin film on the wafer.