发明名称 IN-SITU ANNEALING OF A TMR SENSOR
摘要 A method in one embodiment includes applying a current to a lead of a tunneling magnetoresistance sensor for inducing joule heating of the lead or a heating layer, the level of joule heating being sufficient to anneal a magnetic layer of the sensor; and maintaining the current at the level for an amount of time sufficient to anneal the tunneling magnetoresistive (TMR) sensor. A system in one embodiment comprises a first lead coupled to one end of a tunneling magnetoresistance sensor stack; a second lead coupled to another end of the sensor stack; and a third lead coupled to the first lead, the third lead being selectively coupleable to a ground, wherein a current applied to the first lead at a predetermined level when the third lead is coupled to the ground induces joule heating of the first lead or a heating layer coupled to the first and third leads, the joule heating applied for a predetermined amount of time being sufficient to anneal a magnetic layer of the sensor. Additional systems and methods are also presented.
申请公布号 US2009260719(A1) 申请公布日期 2009.10.22
申请号 US20080106190 申请日期 2008.04.18
申请人 发明人 IBEN ICKO E. TIM
分类号 H01F1/04;G11B5/127;H01F41/22 主分类号 H01F1/04
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