发明名称 |
METHODS OF MAKING LATERAL JUNCTION FIELD EFFECT TRANSISTORS USING SELECTIVE EPITAXIAL GROWTH |
摘要 |
Methods of making a semiconductor device such as a lateral junction field effect transistor (JFET) are described. The methods are self-aligned and involve selective epitaxial growth using a regrowth mask material to form the gate or the source/drain regions of the device. The methods can eliminate the need for ion implantation. The device can be made from a wide band-gap semiconductor material such as SiC. The regrowth mask material can be TaC. The devices can be used in harsh environments including applications involving exposure to radiation and/or high temperatures.
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申请公布号 |
CA2721363(A1) |
申请公布日期 |
2009.10.22 |
申请号 |
CA20092721363 |
申请日期 |
2009.04.01 |
申请人 |
SEMISOUTH LABORATORIES, INC. |
发明人 |
MERRETT, JOSEPH NEIL;SANKIN, IGOR |
分类号 |
H01L21/336;H01L21/20;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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地址 |
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