| 摘要 |
PURPOSE: A thin film manufacturing of IIB-VIA compound semiconductor and a manufacturing method thereof for reducing leakage current are provided to control the nuclear generation by un-uniform reaction of the substrate. CONSTITUTION: A thin film manufacturing of IIB-VIA compound semiconductor and a manufacturing method thereof for reducing leakage current include a substrate(120), a heating source(110), a cover unit(130), a nozzle apparatus(160), a reaction solution feed port(180), and the water supply part(190). The heating source directly heats a substrate located in the substrate backside. The cover unit is arranged to the substrate upside. The cover unit moves up and down and includes the slider in the either side. The nozzle apparatus is combined with the in-between specified position of the cover unit.
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