Method for manufacturing an opto-electronic semiconductor component and opto-electronic semiconductor component

摘要

An optoelectronic semiconductor component (1) comprises an optically active area (2b-c) with a crystalline semiconductor material containing gallium and/or aluminum; a facet (3) on the optically active area; and a boundary layer (4) on the facet. The boundary layer contains sulfur or selenium and comprises up to 10 monolayers. An independent claim is included for a method for producing an optoelectronic semiconductor component comprising: (A) providing an optically active area comprising a semiconductor material that contains gallium and/or aluminum; (B) forming a facet on the optically active area; (C) deoxidizing the facet by a gas stream containing sulfur or selenium; and (D) forming a boundary layer containing sulfur or selenium.