MULTI-LEVEL NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT

摘要

PURPOSE: A multi-level nonvolatile memory device using variable resistive element is provided to improve the reliability of the read operation. CONSTITUTION: A multi-level nonvolatile memory device using variable resistive element includes the multi-level memory cell, the first lead, and the second lead. The multi-level memory cell can change the resistance level. The first lead leads the first bit data by providing the first lead bias to the multi-level memory cell. The second lead leads the second bit data by providing the second lead bias to the multi-level memory cell.