发明名称 Laser irradiation method, laser irradiation apparatus and method for manufacturing crystalline semiconductor film
摘要 The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens array without being affected by the intensity distribution of the original beam. A laser beam emitted from a laser oscillator is divided by two kinds of cylindrical lens arrays into a plurality of beams, which are two kinds of linear laser beams with their energy intensity distribution inverted each other, and the two kinds of linear laser beams are superposed in a minor-axis direction. This can form the linear laser beam having homogeneous intensity distribution on the irradiation surface. <IMAGE>
申请公布号 EP1596241(B1) 申请公布日期 2009.10.21
申请号 EP20050008796 申请日期 2005.04.21
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TANAKA, KOICHIRO;OISHI, HIROTADA
分类号 G02B27/09;H01L21/20;B23K15/00;B23K15/10;B23K26/073;H01L21/336;H01L29/786 主分类号 G02B27/09
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