发明名称 |
Laser irradiation method, laser irradiation apparatus and method for manufacturing crystalline semiconductor film |
摘要 |
The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens array without being affected by the intensity distribution of the original beam. A laser beam emitted from a laser oscillator is divided by two kinds of cylindrical lens arrays into a plurality of beams, which are two kinds of linear laser beams with their energy intensity distribution inverted each other, and the two kinds of linear laser beams are superposed in a minor-axis direction. This can form the linear laser beam having homogeneous intensity distribution on the irradiation surface. <IMAGE> |
申请公布号 |
EP1596241(B1) |
申请公布日期 |
2009.10.21 |
申请号 |
EP20050008796 |
申请日期 |
2005.04.21 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TANAKA, KOICHIRO;OISHI, HIROTADA |
分类号 |
G02B27/09;H01L21/20;B23K15/00;B23K15/10;B23K26/073;H01L21/336;H01L29/786 |
主分类号 |
G02B27/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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