A NON-VOLATILE MEMORY HAVING A BIAS ON THE SOURCE ELECTRODE FOR HCI PROGRAMMING,申请号EP20040760554-传众专利搜索

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发明名称	A NON-VOLATILE MEMORY HAVING A BIAS ON THE SOURCE ELECTRODE FOR HCI PROGRAMMING
摘要
申请公布号	EP1623431(B1)	申请公布日期	2009.10.21
申请号	EP20040760554	申请日期	2004.04.16
申请人	FREESCALE SEMICONDUCTOR, INC.	发明人	CHOY, JON, S.;CHINDALORE, GOWRISHANKAR
分类号	G11C11/34;G11C16/10;G11C16/04;G11C16/12;G11C16/30;G11C16/34;H01L	主分类号	G11C11/34
代理机构		代理人
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