发明名称 Charged particle beam processing using a cluster source
摘要 <p>A cluster source producing a beam of charged clusters 108 is used to assist charged particle beam processing on a work piece 112. For example, a protective layer is applied using a cluster source and a precursor gas, the gas being supplied by a gas injection system 104. The large mass of the cluster and the low energy per atom or molecule in the cluster restricts damage to within a few nanometers of the surface of the work piece. Fullerenes or clusters of fullerenes, bismuth, gold or Xe can be used with a precursor gas to deposit material onto a surface, or can be used with an etchant gas to etch the surface. Clusters can also be used to deposit material directly onto the surface to form a protective layer for charged particle beam processing or to provide energy to activate an etchant gas. An additional charged particle beam 107 can assist in machining the work piece when e.g. a protective layer is applied. </p>
申请公布号 EP1918963(A3) 申请公布日期 2009.10.21
申请号 EP20070119687 申请日期 2007.10.31
申请人 FEI COMPANY 发明人 CHANDLER, CLIVE;SMITH, NOEL
分类号 H01J37/08;H01J37/305 主分类号 H01J37/08
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