| 摘要 |
PURPOSE: A light emitting device and a manufacturing method thereof are provided to reduce the number of processes according to manufacture of a thin film transistor while keeping an electric feature. CONSTITUTION: A light emitting device includes a gate electrode layer, the first insulating film, a semiconductor layer, an impurity semiconductor film, a conductive film, the second insulating film, the first pixel electrode layers(132A,132B), the third insulating film, an EL layer and a cavity. The gate electrode layer is formed on an insulating surface. The first insulating film is formed on the gate electrode layer. The semiconductor layer is formed on the first insulating film. The impurity semiconductor film is formed on the semiconductor layer. The conductive film is formed on the impurity semiconductor film. |
