发明名称 LASER DIODE HAVING ELECTRODE STRUCTURE IMPROVED IN ELECTRIC FIELD CONCENTRATION
摘要 PURPOSE: A laser diode having electrode structure improved in electric field concentration is provided to prevent the leakage of the current through the current blocking layer by concentrating the electric field on the active layer. CONSTITUTION: A laser diode having electrode structure improved in electric field concentration comprises a base substrate(100), an active layer(101), a first current blocking layer(102), a second current blocking layer(103), a clad layer(104), a insulating layer(105), and a upper electrode(106). The active layer is a double hetero structure(DH). The double hetero structure is formed as placed in the mesa structure on the base substrate. The first current blocking layers and the second current blocking layer are successively laminated on the mesa structure neighboring. The clad layer is equipped to cover the top of the active layer. The clad layer combined as PN junction at the upper part of the second current blocking layer. The insulating layer is formed to cover the clad layer. A window is formed in the insulating layer. The window exposes the clad layer. The upper electrode is formed to cover the clad layer exposed by the insulating layer and the window.
申请公布号 KR20090109668(A) 申请公布日期 2009.10.21
申请号 KR20080035032 申请日期 2008.04.16
申请人 LS CABLE LTD. 发明人 PI, JOONG HO;KOO, BON JO;RYU, HAN GWON;PARK, CHIL SUNG
分类号 H01S3/0941 主分类号 H01S3/0941
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