Driver circuits for integrated circuit devices that are operable to reduce gate induced drain leakage (GIDL) current in a transistor and methods of operating the same,申请号EP20070250892-传众专利搜索

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发明名称	Driver circuits for integrated circuit devices that are operable to reduce gate induced drain leakage (GIDL) current in a transistor and methods of operating the same
摘要
申请公布号	EP1885066(A3)	申请公布日期	2009.10.21
申请号	EP20070250892	申请日期	2007.03.02
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	CHOI, JON-HYUN;LEE, KYU-CHAN;YIM, SUNG-MIN;SHIN, DONG-HAK
分类号	H03K19/0185;H03K19/00;H03K19/003	主分类号	H03K19/0185
代理机构		代理人
主权项
地址

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