发明名称 |
Method for fabricating semiconductor device |
摘要 |
A method for fabricating a semiconductor device is provided. The method includes: loading a wafer into a chamber including a ceramic dome coated with a material having etch tolerance against a plasma; etching a gate structure formed on the wafer, thereby generating etch remnants; and removing the etch remnants by using a gas of SF6 as a main etch gas.
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申请公布号 |
US7604750(B2) |
申请公布日期 |
2009.10.20 |
申请号 |
US20050282810 |
申请日期 |
2005.11.18 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
SHIN KYOUNG-CHOUL;MUN SEONG-YEOL |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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