发明名称 Plasma processing apparatus
摘要 A plasma processing apparatus which stably and continuously generates a uniform plasma to process large-diameter wafers using a wide range of seed gases under wide-ranging pressure and density conditions and can be thus used for a wide range of applications, ensuring a high production efficiency. The plasma processing apparatus, which introduces electromagnetic waves through a dielectric window into a reduced pressure vessel, has at least two antenna elements which are rotationally symmetrical. One end of each antenna is grounded and power is fed from a high frequency power supply to the other end in the same or virtually same phase.
申请公布号 US7604709(B2) 申请公布日期 2009.10.20
申请号 US20020247555 申请日期 2002.09.20
申请人 HITACHI, LTD.;HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 KURIHARA MASARU;KOFUJI NAOYUKI;ITABASHI NAOSHI;TSUTSUMI TAKASHI
分类号 H01L21/306;H05H1/46;B01J3/00;B01J19/08;C23C16/00;C23F4/00;H01J37/32;H01L21/00;H01L21/3065 主分类号 H01L21/306
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