发明名称 |
Plasma processing apparatus |
摘要 |
A plasma processing apparatus which stably and continuously generates a uniform plasma to process large-diameter wafers using a wide range of seed gases under wide-ranging pressure and density conditions and can be thus used for a wide range of applications, ensuring a high production efficiency. The plasma processing apparatus, which introduces electromagnetic waves through a dielectric window into a reduced pressure vessel, has at least two antenna elements which are rotationally symmetrical. One end of each antenna is grounded and power is fed from a high frequency power supply to the other end in the same or virtually same phase.
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申请公布号 |
US7604709(B2) |
申请公布日期 |
2009.10.20 |
申请号 |
US20020247555 |
申请日期 |
2002.09.20 |
申请人 |
HITACHI, LTD.;HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
KURIHARA MASARU;KOFUJI NAOYUKI;ITABASHI NAOSHI;TSUTSUMI TAKASHI |
分类号 |
H01L21/306;H05H1/46;B01J3/00;B01J19/08;C23C16/00;C23F4/00;H01J37/32;H01L21/00;H01L21/3065 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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