METHOD FOR PROTECTION OF SURFACE IN CRYSTALS OF p-n- TRANSITIONS BASED ON FUSIBLE GLASS

摘要

FIELD: instrument making. ^ SUBSTANCE: invention is related to technology of semiconductor instruments and integrated circuits production, in particular to methods of glass layer protection over surface in crystals of p-n-transitions against various external impact. In method of protection of surface in crystals of p-n-transitions, clean semiconductor surface of crystal with p-n-transition is coated with a layer of protective glass consisting of mixture of micropowders with alcohol, including 63% of silicon oxide - SiO2; 20% of boron oxide - B2O3; 7.5 of lithium oxide - Li2O3 and 5% of aluminium oxide - AI2O3. After thermal treatment in vacuum at temperature of 28010C for 155 minutes, a vitriform film is created with thickness of 1.0 mcm. Afterwards on surface of crystals film SiO2 is grown by decay of ethyl-silicic acid. Further it is melted with lower layer of glass at temperature of 800C. ^ EFFECT: invention provides for stability and reduction of temperature and duration of process. ^ 4 ex