| 摘要 |
FIELD: metallurgy. ^ SUBSTANCE: invention refers to process of growth of mono crystals of isotope enriched silicon 28Si or 29Si, or 30Si as promising material for production of spin nano-electronics, quantum computers, and radiation-resistant detectors of ionising radiation. The method consists in growth of mono crystals of isotope enriched silicon on mono crystal seed with length L made by the method of crucible-less zone melting; also zone of melt is created by melting the end part of mono crystal seed out of silicon of natural isotope composition with end part of polycrystalline ingot of isotope enriched silicon; further seed is moved along the polycrystalline ingot of isotope enriched silicon at length L corresponding to length of seed and determined from formula , where U is length of melted zone, Ci is concentration of isotope in polycrystalline ingot of isotope enriched silicon, Cn is concentration of isotope in seed out of silicon of natural isotope composition, C is required concentration of isotope at the end of seed, g is ratio of weight of melted zone of seed out of silicone of natural isotope composition to weight of melted zone. ^ EFFECT: growth of mono crystals of isotope enriched silicon with low predetermined and controlled level of isotope dilution. ^ 1 ex |
